Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films

摘要

A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm². The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.