METHOD OF MANUFACTURING FERAM DEVICE

摘要

A method for manufacturing a ferroelectric RAM(Random Access Memory) device is provided to prevent the lifting of an FEB(Ferro Barrier Layer) by forming an adhesive layer between interlayer dielectrics. A first interlayer dielectric(250) is formed on a substrate(210) to cover a ferroelectric capacitor(FeCAP). An adhesive layer(260) is formed on the first interlayer dielectric. A second interlayer dielectric(270) is formed on the adhesive layer. The second interlayer dielectric, the adhering layer, and the first interlayer dielectric are etched to form a contact hole which exposes an upper electrode(240). An FEB(Ferro Barrier Layer)(280) is formed on the entire surface of the contact hole. A metal wire(290) is formed on the entire surface of the contact hole on which the FEB is formed. A protective layer(299) is formed on the resultant substrate structure on which the metal wire is formed.