METHOD FOR FABRICATING A METAL WIRE IN A SEMICONDUCTOR

摘要

A method for fabricating a metal line of a semiconductor device is provided to secure reliability by improving a gap-fill characteristic of an interlayer dielectric between metal lines. An interlayer dielectric(202) and an etch-stop layer are sequentially formed on a semiconductor substrate(200) having a base layer. A contact hole is formed at the semiconductor substrate by etching selectively the etch-stop layer and the interlayer dielectric. A conductive layer is formed to bury the contact hole. A contact plug(206) is formed by removing the conductive layer and the etch-stop layer. A buffer layer(208) is formed to cover a part of both sides of the contact plug. A metal line(216) is formed by depositing a metal layer and patterning the metal layer.