发明名称 SUBSTRATE-PROCESSING APPARATUS, SUBSTRATE-PROCESSING METHOD, SUBSTRATE-PROCESSING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDED WITH SUCH PROGRAM
摘要 <p>A pattern-forming apparatus (1) comprises a test device (400) for measuring the state of a resist pattern formed on a substrate W after development and outputting the first measurement result, and for measuring the state of a resist pattern formed on the substrate W after etching and outputting the second measurement result; a storage means (502) recorded with a correlation formula obtained from the first measurement result and the second measurement result; and a control unit (500) for setting the conditions in the first heat treatment and/or the second heat treatment basing on the difference between the target value of the pattern state after development and the first measurement result by obtaining the target value of the pattern state after development from the target value of the pattern state after etching based on the correlation formula.</p>
申请公布号 KR20080049017(A) 申请公布日期 2008.06.03
申请号 KR20087003969 申请日期 2006.09.13
申请人 TOKYO ELECTRON LIMITED 发明人 OGATA KUNIE;TOMITA HIROSHI;TANAKA MICHIO;UEMURA RYOICHI
分类号 G03F7/26;H01L21/02;H01L21/027;H01L21/66 主分类号 G03F7/26
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