METHOD OF FORMING A COBALT SILICIDE LAYER STRUCTURE AND METHOD OF FORMING A GATE STRUCTURE USING THE SAME

摘要

A method for forming a cobalt silicide layer structure and a method for forming a gate structure using the same are provided to obtain high uniformity by controlling reaction between cobalt and silicon. A thin film forming process is performed to form a thin film including a silicon nitride on a surface of a silicon substrate by performing a nitration process for a silicon substrate(10). A cobalt thin film is formed on a thin film(12) including the silicon nitride. A cobalt silicide layer is obtained from the cobalt layer by causing reaction between cobalt of the cobalt thin film and silicon of the silicon substrate. A process for forming the thin film including the silicon nitride is performed by a rapid thermal nitration process.