| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the drop of throughput of lithography step due to device microfabrication as well as reduce the cost, and to improve the dimensional accuracy of patterning for microfabrication. <P>SOLUTION: The processing method includes a lithography step wherein a substrate processing system is used to conduct at least resist application (COT), exposure treatment (EXP), heating after exposure (PEB), development (DEV) or the like to a semiconductor wafer W so as to form a specified pattern therein; an etching (ET) step wherein a pattern after development is used as a mask; and a measurement step to measure the width of a pattern line. According to measurement information obtained in the measurement step, exposure correction in the exposure treatment in the second or subsequent lithography step, temperature correction in heating after exposure and/or etching correction in the etching step are conducted. <P>COPYRIGHT: (C)2008,JPO&INPIT |
