Silicon p-doping method for e.g. manufacturing p-conducting base regions of thyristor, involves separating outdiffusion layer, collecting atoms into wafer under recrystallisation of defects, and placing atoms at space locations

摘要

The method involves implantating a p-dopant in a surface close area (1) of a semiconductor wafer (2), and laser illuminating of the surface area under formation of a layer with p-dopant atoms, where the dopant is made of aluminum or gallium. An outdiffusion restraining covering layer is separated. The atoms are collected into the wafer under recrystallisation of silicon lattice defects and are placed at lattice space locations. The wafer is made from monocrystalline silicon, and the outdiffusion layer is made of silicon, silicon nitride, silicon carbide, aluminum nitride or boron nitride.