| 摘要 |
The general field of the invention is that of optical devices comprising a semiconductor laser emission source and an optical isolator, which are integrated. These devices are used mainly in the field of high-data-rate digital telecommunications. The device according to the invention comprises at least one buried optical waveguide (2) in the stripe form, in which an optical wave can propagate at a first given wavelength, said device also including a plane diffraction grating (4) coupled to said optical waveguide, said grating including a series of uniformly spaced identical structures (41) made of a magnetooptic material exhibiting a Kerr effect and having a non-reciprocal optical index, said index having a first value in a first direction of propagation of the optical wave and a second value in the opposite direction, the shape, the period, the number of structures and the optical index difference being such that, in a first direction of propagation of the optical wave, the grating has a low reflection coefficient (R) and, in the opposite direction of propagation of the optical wave, the grating has a high reflection coefficient (R), so as to achieve optical isolation with respect to the propagation wave. |
