发明名称 HIGH FREQUENCY POWER SUPPLY DEVICE AND HIGH FREQUENCY POWER SUPPLYING METHOD
摘要 <p>A high frequency power supply device and a method thereof are provided to minimize a semiconductor device by controlling a supply of a high frequency power in a low density plasma. A high frequency power supply device includes a first high frequency power supply unit(11), and a second high frequency power supply unit(71). The first high frequency power unit includes a first high frequency oscillation unit(16), a first power amplifying unit(15), a first directivity coupler(12), a first heterodyne detecting unit(13), and a first control unit(14). The first high frequency oscillation unit of a frequency variable oscillates a high frequency power of a first frequency. The first power amplifying unit receives an output of the first frequency oscillation unit and amplifies the output power. The first directivity coupler receives a reflective wave from a plasma chamber(5) and a propagation wave from the first power amplifying unit. The first heterodyne detection unit performs a heterodyne detection of a reflective signal from the first directivity coupler. The first control unit receives a detected signal from the first heterodyne detection unit and a propagation wave signal from the first directivity coupler. The first control unit controls an oscillation frequency of the first high frequency oscillation unit and an output power of the first power amplifying unit.</p>
申请公布号 KR20080046591(A) 申请公布日期 2008.05.27
申请号 KR20070119106 申请日期 2007.11.21
申请人 ADVANCED MICRO-FABRICATION EQUIPMENT INC. ASIA;PEARL KOGYO CO., LTD. 发明人 YASUNORI MAEKAWA;TAKESHI NAKAMURA;EIICH HAYANO;JINYUAN CHEN;HIROSHI IIZUKA
分类号 H02M3/28;H01L21/3065;H05B7/00;H05H7/02 主分类号 H02M3/28
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