NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to enhance the crystal property by growing an electron implanting layer and an active layer in the high temperature, and to improve the optical property by improving the electron implanting efficiency in the electron implanting layer. A buffer layer(12) is formed at the upper surface of a sapphire substrate(11). An n-type GaN layer(13), an electron implanting layer(14), an active layer(15), and electron shielding layer(16) and a p-type GaN layer(17) are formed sequentially on the sapphire substrate. An n-type electrode(18) is formed on the n-type GaN layer, and a p-type electrode(19) is formed on the p-type GaN layer respectively. The electron implanting layer is formed between the active layer and the n-type GaN layer.