| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of improving writing efficiency and achieving a large memory capacity. <P>SOLUTION: The memory cell of the nonvolatile semiconductor memory is formed into a three-dimensional structure, and hot electrons caused by interband tunneling are generated near a drain, and further, the hot electrons are so injected into a charge accumulating layer disposed at a large solid angle with respect to to the end of its drain by the three-dimensional structure as to perform data writing. Thereby, in comparison with a writing method using conventional interband hot-electron injection, writing efficiency is improved, and achieved in large capacity by the three-dimensional structure and a multiple-stage laminating structure. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
