| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for cleaning a substrate capable of reducing a required quantity of supply of a rinsing liquid and improving efficiency of removing development defects of photo resist film. <P>SOLUTION: While rotating a wafer W at a rotational speed of 380 to 1,000 rpm, a rinsing liquid R is injected from a rinsing liquid supply nozzle 40 to a center portion of the wafer W with a supply flow rate of 80 to 500 ml/min for one second. Thereafter, injection of the rinsing liquid R is stopped for one second. Thereafter, the rinsing liquid R is injected again to the center portion of the wafer W with the supply flow rate of 80 to 500 ml/min for one second. Such intermittent injection of the rinsing liquid R and the stopping are carried out for 15 seconds. Thereby, the development defects of the photo resist film on the wafer W can be removed by dispersing the rinsing liquid R on the wafer W. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
