| 摘要 |
A method of forming a bit line of a semiconductor device is provided to lower the resistivity of a tungsten layer by increasing the size of a grain of the tungsten layer. A method of forming a bit line of a semiconductor device comprises the following steps of: forming a titanium layer and a titanium nitride layer as a bit line contact layer on a semiconductor substrate(100) on which a bit line contact hole is formed; providing argon gas having partial pressure of 97 to 97.5% and oxygen gas having partial pressure of 2.5 to 3.0% on the bit line contact layer while sputtering the argon gas to a tungsten target to form an amorphous tungsten buffer layer(160) containing oxygen; and depositing a tungsten layer(170) to embed the bit line contact hole through a chemical vapor deposition to form a bit line layer.
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