| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor element, which improves the quality and yield of semiconductor elements, especially of 60 nm or less. SOLUTION: The process for producing a semiconductor element comprises forming a floating gate, a dielectric film, a conductive film for a control gate, a tungsten silicide film, a primary silicon oxynitride film, a hard mask film, a secondary silicon oxynitride film, and an organic lower anti-reflection film on a semiconductor substrate 200, removing each film with reverse procedures starting from the organic lower anti-reflection film, removing the dielectric film to form a spacer 224 on a side of the floating gate and removing the floating gate. The etching selection ratio is set so that the primary conductive film is removed through the two steps of first and second steps. Then, such a high aspect ratio results in preventing the side of gate line from having an attack even when the gate etching technique for 70 nm elements is used as it is for those elements of 60 nm or less. The spacer 224 protects an active area extending in the boundary of field area. COPYRIGHT: (C)2008,JPO&INPIT
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