发明名称 |
Nonvolatile memory, semiconductor device, and method of programming to nonvolatile memory |
摘要 |
Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a booster circuit. In a nonvolatile memory such as a flash memory, data is determined at the time of writing operation. While skipping a bit corresponding to write data having the logic "1" (or logic "0"), writing operation to bits corresponding to write data having the logic "0" (or logic "1) is successively performed.
|
申请公布号 |
US7376015(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20050197588 |
申请日期 |
2005.08.05 |
申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;SUZUKAWA KAZUFUMI;FUJITO MASAMICHI;YAMAKI TAKASHI;MAKUTA KIICHI;WADA MASASHI;KAWAJIRI YOSHIKI |
分类号 |
G11C16/02;G11C16/06;G11C8/02;G11C16/12 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|