发明名称 Nonvolatile memory, semiconductor device, and method of programming to nonvolatile memory
摘要 Disclosed is a nonvolatile memory with a shortened total write time, capable of stably writing data by making a write current constant while reducing fluctuations in a voltage generated by a booster circuit. In a nonvolatile memory such as a flash memory, data is determined at the time of writing operation. While skipping a bit corresponding to write data having the logic "1" (or logic "0"), writing operation to bits corresponding to write data having the logic "0" (or logic "1) is successively performed.
申请公布号 US7376015(B2) 申请公布日期 2008.05.20
申请号 US20050197588 申请日期 2005.08.05
申请人 RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;SUZUKAWA KAZUFUMI;FUJITO MASAMICHI;YAMAKI TAKASHI;MAKUTA KIICHI;WADA MASASHI;KAWAJIRI YOSHIKI
分类号 G11C16/02;G11C16/06;G11C8/02;G11C16/12 主分类号 G11C16/02
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