| 摘要 |
<p>A tunneling magnetoresistance device, a method of manufacturing the same, a magnetic head using the same, and a magnetic memory are provided to obtain a large variation of resistances by forming a first free layer with an amorphous or a fine crystalline material. A pinned layer(20,22) is composed of a ferromagnetic material having a fixed magnetization direction. A barrier layer is arranged on the pinned layer. Electrons penetrate the barrier layer by a tunneling effect. A first free layer(30) is arranged on the barrier layer and is composed of an amorphous or a fine crystalline soft magnetic material for changing a magnetization direction under an external magnetic field. A second free layer(32) is arranged on the first free layer. The second free layer is composed of a crystalline soft magnetic material to change a magnetization direction under an external magnetic field and to be exchanged and coupled with the first free layer.</p> |
