DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE

摘要

A display device and a method of manufacturing the display device are provided to improve crystallinity of polysilicon layer of an MIS(Metal Insulator Semiconductor) transistor when the MIS transistor has a bottom gate structure. A display device includes MIS transistors formed in such a manner that a conductive layer, an insulating layer(102) and a semiconductor layer are laminated on a substrate(100). The display device includes a first MIS transistor formed in a first region of the substrate and a second MIS transistor formed in a second region different from the first region. The first and second MIS transistors have gate electrodes(GP1,GP2) between the substrate and the semiconductor layer. The semiconductor layer(SC1) of the first MIS transistor is made of amorphous silicon and the semiconductor layer(SC2) of the second MIS transistor includes polysilicon. The gate electrode of the second MIS transistor is thinner than the gate electrode of the first MIS transistor.