| 摘要 |
A memory device includes a main memory cell having a plurality of first memory cells for storing data, wherein a special block for storing a column address corresponding to a first memory cell having at least one failure is disposed in a part of area of the main memory cell; a start address block configured to store address information initiated by the special block of the main memory cell; and a repair information block configured to provisionally store the column address stored in the special block, and to output a repair controlling signal when operating the memory device.
|
