SEMICONDUCTOR DEVICE HAVING PROJECTING ELECTRODE FORMED BY ELECTROLYTIC PLATING, AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device having a protruded electrode formed by an electrolytic plating and a method for manufacturing the same are provided to remove a dry film resist forming process and a peeling process by forming a foundation metal layer in an opening of an overcoat layer. A plurality of wires(8) are prepared on a semiconductor substrate(1). An overcoat layer(9) is formed on the semiconductor substrate including the wires and has an opening(10) formed on a section corresponding to a connection pad(2) of the wire. A foundation metal layer(11) is installed in the opening of the overcoat layer. A protruded electrode(12) is installed in the foundation metal layer in the opening of the overcoat layer. The foundation metal layer is formed on a circumference of the opening. The protruded electrode is installed on the foundation metal layer which is formed on the circumference of the opening. A solder ball is prepared on the protruded electrode.