发明名称 Substrate laser marking
摘要 A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.
申请公布号 US7371659(B1) 申请公布日期 2008.05.13
申请号 US20010020764 申请日期 2001.12.12
申请人 LSI LOGIC CORPORATION 发明人 YAMAMOTO HARUHIKO;SETO HIDEAKI;SATO NOBUYOSHI;KUROKI KYOKO
分类号 H01L21/76 主分类号 H01L21/76
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