| 摘要 |
A method of manufacturing a thin film semiconductor device which includes a thin film transistor having a first semiconductor layer, a gate insulating layer, and a gate electrode which are laminated in this order on a substrate, and a capacitive element having a lower electrode that conductively connects a second semiconductor layer coplanar with the first semiconductor layer, a dielectric layer coplanar with the gate insulating layer, and an upper electrode coplanar with the gate electrode which are laminated in this order on the substrate is provided. The method includes, after simultaneously forming the gate insulating layer and the dielectric layer, and before forming the gate electrode and the upper electrode, introducing dopants into the second semiconductor layer from a first opening of a mask formed on a surface of the substrate to form the lower electrode, and etching a surface of the dielectric layer from the first opening of the mask.
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