发明名称 INTEGRATED METHOD FOR REMOVAL HALOGEN RESIDUES FROM SUBSTRATE ETCHED BY THERMAL PROCESS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method and a system for removal volatile residues from a substrate. <P>SOLUTION: The process of removal volatile residues is performed en route in a system while performing a halogen treating process on a substrate. The process of eliminating volatile residues is performed in the system except a halogen treatment chamber and an FOUP. The method of eliminating volatile residues from a substrate includes a step of preparing a processing system with a vacuum-tight platform, a step of processing a substrate through a chemistry including halogen in a processing chamber of the platform, and a step of processing the processed substrate in the platform and discharge volatile residues from the processed substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008109136(A) 申请公布日期 2008.05.08
申请号 JP20070272802 申请日期 2007.10.19
申请人 APPLIED MATERIALS INC 发明人 KAWAGUCHI MARK NAOSHI;LO KIN PONG;HOOGENSEN BRETT CHRISTIAN;WEN SANDY M;KIM STEVEN H;BAHNG KENNETH J;DAVIS MATTHEW FENTON;LILL THORSTEN
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址
您可能感兴趣的专利