发明名称 CONTAINER TREATMENT DEVICE BY PLASMA CVD
摘要 PROBLEM TO BE SOLVED: To obtain a container treatment device by plasma CVD (chemical vapor deposition) where, at the introduction port of a waveguide for microwaves to a metal cavernous enclosure, the reflection quantity of microwaves is reduced. SOLUTION: A waveguide is joined with the side face of a cylindrical metal cavernous enclosure having an axis to a direction orthogonal to the axial direction, and a slit is formed at the joined face between the waveguide and the metal cavernous enclosure to a direction orthogonal to the axis of the metal cavernous enclosure, so as to combine the waveguide and the metal cavernous enclosure with the slit, and the slit is clogged with a dielectric ring going around the circumference of the axis of the metal cavernous enclosure along the inner wall of the metal cavernous enclosure. A gas introduction tube having electrical conductivity is installed in parallel with the axis of the cylinder of the metal cavernous enclosure, and a planar electrical contact part vertical to the gas introduction part and having electrical conductivity is installed in the lower part of a hollow container. The electrical contact part is electrically connected with the gas introduction tube and the metal cavernous enclosure, and the height of the slit from the electrical contact part is controlled to the integral multiple ofλ/2±λ/8. The gas introduction tube is inserted from the opening part, and the hollow container is installed in the metal cavernous enclosure. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008106333(A) 申请公布日期 2008.05.08
申请号 JP20060292343 申请日期 2006.10.27
申请人 TOPPAN PRINTING CO LTD 发明人 YOSHIMOTO HISASHI
分类号 C23C16/511 主分类号 C23C16/511
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