发明名称 Phosphorus-containing silazane composition, phosphorus-containing siliceous film, phosphorus-containing siliceous filler, method for producing phosphorus-containing siliceous film, and semiconductor device
摘要 An objective of the present invention is to provide a phosphorous-containing siliceous material having a specific permittivity of not more than 3.5. The phosphorus-containing silazane composition according to the present invention is characterized by comprising a polyalkylsilazane and at least one phosphorus compound in an organic solvent. A phosphorus-containing siliceous film may be formed by coating the composition onto a substrate to form a film which is then prebaked at a temperature of 50 to 300° C. and is then baked in an inert atmosphere at a temperature of 300 to 700° C. The phosphorus compound according to the present invention is preferably a pentavalent phosphoric ester or phosphazene compound.
申请公布号 US7368491(B2) 申请公布日期 2008.05.06
申请号 US20040564336 申请日期 2004.07.07
申请人 AZ ELECTRONIC MATERIALS USA CORP. 发明人 AOKI TOMOKO;AOKI HIROYUKI
分类号 C08J3/00;C08K5/49;C08L83/00;C08L83/16;C09D183/16;D06M15/643;H01L21/314;H01L21/768;H01L29/00 主分类号 C08J3/00
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