发明名称 |
Phosphorus-containing silazane composition, phosphorus-containing siliceous film, phosphorus-containing siliceous filler, method for producing phosphorus-containing siliceous film, and semiconductor device |
摘要 |
An objective of the present invention is to provide a phosphorous-containing siliceous material having a specific permittivity of not more than 3.5. The phosphorus-containing silazane composition according to the present invention is characterized by comprising a polyalkylsilazane and at least one phosphorus compound in an organic solvent. A phosphorus-containing siliceous film may be formed by coating the composition onto a substrate to form a film which is then prebaked at a temperature of 50 to 300° C. and is then baked in an inert atmosphere at a temperature of 300 to 700° C. The phosphorus compound according to the present invention is preferably a pentavalent phosphoric ester or phosphazene compound.
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申请公布号 |
US7368491(B2) |
申请公布日期 |
2008.05.06 |
申请号 |
US20040564336 |
申请日期 |
2004.07.07 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
AOKI TOMOKO;AOKI HIROYUKI |
分类号 |
C08J3/00;C08K5/49;C08L83/00;C08L83/16;C09D183/16;D06M15/643;H01L21/314;H01L21/768;H01L29/00 |
主分类号 |
C08J3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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