发明名称 |
METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE |
摘要 |
This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
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申请公布号 |
US2008102601(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070877456 |
申请日期 |
2007.10.23 |
申请人 |
BOURDELLE KONSTANTIN;MAZURE CARLOS |
发明人 |
BOURDELLE KONSTANTIN;MAZURE CARLOS |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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