发明名称 METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE
摘要 This invention relates to a method for producing a substrate by transferring a layer of a material from a donor substrate to a support substrate, and then by removing a part of the layer of material to form the thin layer. The step of removing a part of the layer of material to form the thin layer comprises forming an amorphous layer in a part of the thin layer, and then recrystallizing the amorphous layer.
申请公布号 US2008102601(A1) 申请公布日期 2008.05.01
申请号 US20070877456 申请日期 2007.10.23
申请人 BOURDELLE KONSTANTIN;MAZURE CARLOS 发明人 BOURDELLE KONSTANTIN;MAZURE CARLOS
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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