| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which can be manufactured at low cost and can realize complete transfer of signal charge, and to provide a solid-state imaging device which obtains high spatial resolution, by arranging a plurality of the semiconductor elements as pixels. SOLUTION: The semiconductor element comprises a semiconductor region 1 of a first conductivity type; a surface-embedded region for light-receiving region 11a of a second conductivity type, which is embedded in a part of the top of the semiconductor region 1, to receive a light; a charge-storing region 12a of the second conductivity type, which is embedded in a part of the top of the semiconductor region 1 and has a potential well deeper than the surface-embedded region for light-receiving region 11a, to store a signal charge generated by the surface-embedded region for light-receiving region 11a; a charge-reading region 13 which receives the signal charge stored in the charge-storing region 12a; a first potential control means 31 which transfers the signal charge from the surface-embedded region for light-receiving region 11a to the charge-storing region 12a; and a second potential control means 32 which transfers the signal charge from the charge-storing region 12a to the charge-reading region 13. COPYRIGHT: (C)2008,JPO&INPIT
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