| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V compound semiconductor element and a group III-V compound semiconductor epitaxial wafer capable of improving both a sheet resistance and a threshold voltage. SOLUTION: The group III-V compound semiconductor element comprises a channel layer (5) and carrier supplying layers (3, 7) over and under the channel layer respectively through spacer layers (4, 6) on a substrate (1). The under side carrier supplying layer (3) of the substrate (1) side is aδ-doped layer, and the upper side carrier supplying layer (7) is a homogeneous doped layer. COPYRIGHT: (C)2008,JPO&INPIT
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