发明名称 |
CMOS device with raised source and drain regions |
摘要 |
A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.
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申请公布号 |
US2008102573(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060588920 |
申请日期 |
2006.10.27 |
申请人 |
LIANG CHUN-SHENG;CHEN HUNG-MING;HUANG CHIEN-CHAO;YANG FU-LIANG |
发明人 |
LIANG CHUN-SHENG;CHEN HUNG-MING;HUANG CHIEN-CHAO;YANG FU-LIANG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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