THIN FILM TRANSISTER SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A TFT substrate is provided to reduce coupling and outgassing by using an organic layer made of cycloolefin polymer resin. A gate metal pattern is formed on an insulation substrate(20), including a gate electrode(40) and a storage line(49). A semiconductor layer is formed on the gate metal pattern, including a gate insulation layer, an active layer(50) and an ohmic contact layer(52). A source/drain metal pattern is formed on the resultant structure. An organic layer(60) having a pixel hole is formed on the insulation substrate having the source/drain metal pattern wherein the organic layer can be made of cycloolefin polymer resin, protecting the semiconductor layer and avoiding outgassing and a leakage current. A pixel electrode(70) is formed on the organic layer along the pixel hole.