| 摘要 |
PROBLEM TO BE SOLVED: To form a contact having a small diameter and a trench having a large surface area with a less number of steps. SOLUTION: A resist mask having a first opening of a small opening width and a second opening of a large opening width is formed on an insulating film in a laminated structure formed on a semiconductor substrate. Etching is carried out so that a first hole passed through the insulating film is formed in the first opening. A deposition film is formed so that the first hole is buried and the second opening is not buried. The deposition film is etched so that the insulating film is exposed in the second opening. Etching is carried out so that a second hole passed through the exposed insulating film is formed in the second opening. COPYRIGHT: (C)2008,JPO&INPIT
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