| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress an increase in stress generated by thermal treatment on a semiconductor substrate with a through electrode at high reliability. <P>SOLUTION: As a conductive film material used for the through electrode, there is use a material in which film stress changes once to a tensile stress side by thermal treatment to have a peak, and further changes to a compressive stress side by high temperature thermal treatment. A through conductive film 12 in a through electrode 15 penetrating a semiconductor substrate 11 is formed through a plurality of stages. For example, after a conductive film 12a of a first layer is formed, a temperature is raised up to a thermal treatment temperature or higher in which the film stress has a peak for thermal treatment to mitigate the stress of the conductive film of the first layer. Further, a through hole is embedded with a conductive film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
