| 摘要 |
A method of manufacturing a semiconductor device is provided to prevent parasitic capacitance from being generated and a chip from being damaged, by forming a high voltage resistor made of a poly-silicon layer on the second interlayer dielectric, during a process of forming a drain contact plug by using a poly-silicon layer. A method of manufacturing a semiconductor device comprises the steps of: etching the first interlayer dielectric(114) on a semiconductor substrate(100) with a gate(112) formed thereon to form a drain contact hole; forming a conductive layer on the first interlayer dielectric including the drain contact hole; etching the conductive layer except for an area where a resistor(122) will be formed, and forming a drain contact plug(120) and a resistor; forming the second interlayer dielectric(116) on the first interlayer dielectric, resistor, and drain contact plug, and conducting an etching process for exposing the drain contact plug, resistor, and semiconductor substrate, to form a metal wiring contact hole; and forming a metal layer for filling the metal wiring contact hole, to form a metal wiring(126).
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