An MOS varactor may be formed without tip implants or HALO implants. As a result, parasitic resistance may be reduced, jitter may be improved, and the quality factor may be increased, as well as the tunable range of the varactor.
申请公布号
US2008079116(A1)
申请公布日期
2008.04.03
申请号
US20060542540
申请日期
2006.10.03
申请人
发明人
YUAN LUO;KAU DERCHANG;SHIH WEI-KAI;AHMED SHAFQAT;ARMSTRONG BRIAN K.
