| 摘要 |
This invention relates to a cost effective method of producing a back contacted silicon solar cell and the cell made by the method, where the method comprises applying a silicon substrate, wafer or thin film, doped on the back side with alternating P-type and N-type conductivity in an interdigitated pattern and optionally a layer of either P- or N-type on the front side of the wafer, depositing one or more surface passivation layers on both sides of the substrate, creating openings in the surface passivation layers on the back side of the substrate, depositing a metallic layer covering the entire back side and which fills the openings in the surface passivation layers, and creating openings in the deposited metallic layer such that electric insulated contacts with the doped regions on the back side of the substrate is obtained. |
