| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to decrease contact resistance by ensuring an overlapped area between a storage node and a contact plug. After a third interlayer dielectric(25) is formed on the entire substrate including a contact plug(24), the third interlayer dielectric is subjected to chemical mechanical polishing to expose the contact plug. A mold insulating layer(26) is formed on the contact plug and the third interlayer dielectric, and then the mold insulating layer is etched to expose the contact plug and thus form a hole(27) defining a region in which a storage node is formed. After a conductive layer for a storage node is formed on the mold insulating layer, the conductive layer is etched to form a storage node(28) on a surface of the hole. The mold insulating layer is removed through a wet etching process, a dielectric layer and a plate electrode are formed on the storage node.
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