LIGHT EMITTING DEVICES

摘要

A semiconductor light emitting layer is provided to prevent the emitted light from being reflected or absorbed by an electrode portion by forming the electrode portion under an active layer. A first electrode layer(160) is formed between a conductive substrate(140) and a first conductive semiconductor layer(110). At least one electrode pad(150-b) is extended from the first electrode layer to a surface of a second conductive semiconductor layer(130), and is electrically isolated from the first electrode layer, the first conductive semiconductor layer and an active layer(120). At least one extension(150-a) is extended from the first electrode layer in an interior of the second conductive semiconductor layer, and is electrically isolated from the first electrode layer, the first conductive semiconductor layer and the active layer. An electrode connection portion(150-c) is formed on the same layer as the first electrode layer.