发明名称 |
Methods for forming uniform lithographic features |
摘要 |
Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conformal layer is deposited over the overhang and in the holes until the conformal layer closes off the holes to form a void/seam in each hole. The void/seam in each hole is exposed by etching back a top surface. The void/seam in each hole is extended to the underlying layer.
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申请公布号 |
US7351648(B2) |
申请公布日期 |
2008.04.01 |
申请号 |
US20060335372 |
申请日期 |
2006.01.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK CHARLES;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER, III CHARLES W.;LAM CHUNG HON |
分类号 |
H01L21/44;H01L21/76 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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