Cascode, cascode circuit and method for vertical integration of two bipolar transistors into a cascode arrangement

摘要

A cascode of a high-frequency circuit, includes a first transistor having a first base semiconductor region, a first collector semiconductor region and a first emitter semiconductor region, and a second transistor having a second base semiconductor region, a second collector semiconductor region and a second emitter semiconductor region. The first emitter semiconductor region of the first transistor and the second collector semiconductor region of the second transistor are geometrically arranged on top with respect to a wafer surface, while the first collector semiconductor region of the first transistor and the second emitter semiconductor region of the second transistor are geometrically arranged on the bottom with respect to the wafer surface.