发明名称 HALF TONE MASK
摘要 A half tone mask is provided to be applicable to a photolithography process of many cycles and embody uniform patterning without being restricted in an area of a mask. A half tone mask(100) includes: a transparent substrate(110) made of quartz; a shielding layer(120) formed on the transparent substrate; a transmitting part(121) formed on the transparent substrate; and a semi-transmitting part(130) which is formed on the transparent substrate and transmits only a part of a light with a predetermined wavelength band to be irradiated. The shielding layer is made of a chrome or chrome oxide material. The semi-transmitting part is formed of chrome oxide.
申请公布号 KR20080027812(A) 申请公布日期 2008.03.28
申请号 KR20080021247 申请日期 2008.03.07
申请人 LG MICRON LTD. 发明人 PARK, SANG UK;KANG, KAP SEOK;LEE, KEUN SIK;PARK, JAE WOO;SIM, YU KYUNG
分类号 G03F1/32;G03F1/54 主分类号 G03F1/32
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