摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory suppressing data stored in other electric charge accumulating sections in the same memory cell from being changed caused by storing data to the charge accumulating section, and to provide a data writing method, a method of manufacturingthe nonvolatile semiconductor memory, and a data writing program. <P>SOLUTION: The data are stored in the first and second charge accumulating sections (30, 32) of the memory cell 10 by supplying an electric power corresponding to the data to be stored in descending order of the charged amount to be accumulated to the first and second charge accumulating sections (30, 32) to accumulate the charge to the first and second charge accumulating sections (30, 32). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |