发明名称 NONVOLATILE SEMICONDUCTOR MEMORY, DATA WRITING METHOD, METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY, AND DATA WRITING PROGRAM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory suppressing data stored in other electric charge accumulating sections in the same memory cell from being changed caused by storing data to the charge accumulating section, and to provide a data writing method, a method of manufacturingthe nonvolatile semiconductor memory, and a data writing program. <P>SOLUTION: The data are stored in the first and second charge accumulating sections (30, 32) of the memory cell 10 by supplying an electric power corresponding to the data to be stored in descending order of the charged amount to be accumulated to the first and second charge accumulating sections (30, 32) to accumulate the charge to the first and second charge accumulating sections (30, 32). <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008071382(A) 申请公布日期 2008.03.27
申请号 JP20060247103 申请日期 2006.09.12
申请人 OKI ELECTRIC IND CO LTD 发明人 ONUKI KENJI;FUJII NARIHISA
分类号 G11C16/02;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
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