| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method of a semiconductor device in which the occurrence of dishing and erosion can be controlled, and excellent flatness is imparted to the semiconductor device without producing scratches. <P>SOLUTION: The polishing method for planarizing a semiconductor device having a conductor film principally comprising copper includes (a) a step of polishing a conductor layer with polishing solution containing a compound represented by general formula (1) or (2), an oxidizing agent and abrasive grains at a chemical mechanical polishing speed of 300 nm/min or above and at an etching speed of 70 nm/min or above, and (b) a step of polishing a conductor layer with polishing solution containing a compound represented by general formula (3), an oxidizing agent and abrasive grains at a chemical mechanical polishing speed of 300 nm/min or less and at an etching speed of 15 nm/min or less. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
