发明名称 Memory array having an interconnect and method of manufacture
摘要 A memory array includes first, second, third and forth memory cell strings. Each of the first, second, third, and fourth memory cell strings includes a number of serially-coupled memory cells, including a first memory cell and a last memory cell. A first interconnect is coupled to a first bit line and to each of the first, second, third and fourth memory cell strings. The first interconnect includes first, second, third and fourth string input select gates. Each input select gate has a first terminal coupled to the first bit line, and a second terminal coupled to one of the respective first, second, third or fourth memory cell strings.
申请公布号 US2008074927(A1) 申请公布日期 2008.03.27
申请号 US20060525547 申请日期 2006.09.22
申请人 HOFMANN FRANZ;SPECHT MICHAEL;NAGEL NICOLAS;WILLER JOSEF 发明人 HOFMANN FRANZ;SPECHT MICHAEL;NAGEL NICOLAS;WILLER JOSEF
分类号 G11C16/04 主分类号 G11C16/04
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