| 摘要 |
A nonvolatile semiconductor memory device includes an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate. A mean roughness of an interface between a polysilicon, of which the floating gate electrode is formed, and the floating gate insulation film is 1.5 nm or less.
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