发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
摘要 FIELD: measurement technology; producing sensing components for pressure transducers. ^ SUBSTANCE: proposed method for manufacturing semiconductor devices includes creation of regions with semiconductor device layout components on one end of silicon wafer and division of wafer into chips; prior to do so, wafer is thinned by way of etching. Pending etching shielding mask is formed on wafer underside to provide for shielding peripheral regions of wafer so that internal configuration of mask peripheral area coincides with external configuration peripheral area of structures on wafer face. Protective metal coating is formed on wafer face prior to its division with windows disposed above respective lines dividing wafer into chips including lateral etching; shielding mask is formed on underside of wafer to provide for additional protection of wafer internal regions so that mask configuration departs from location regions of semiconductor layout components. ^ EFFECT: facilitated manufacture, enhanced yield and metrological characteristics of chips. ^ 1 cl, 5 dwg
申请公布号 RU2321101(C1) 申请公布日期 2008.03.27
申请号 RU20060124280 申请日期 2006.07.06
申请人 FGUP "NII FIZICHESKIKH IZMERENIJ" 发明人 BARINOV IL'JA NIKOLAEVICH;KOZIN SERGEJ ALEKSEEVICH
分类号 H01L21/78 主分类号 H01L21/78
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