发明名称 Method for monitoring film thickness, a system for monitoring film thickness, a method for manufacturing a semiconductor device, and a program product for controlling film thickness monitoring system
摘要 A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying from the thickness memory; calculating theoretical profiles of the optimal spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.
申请公布号 US7348192(B2) 申请公布日期 2008.03.25
申请号 US20040933441 申请日期 2004.09.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIKAMI TORU
分类号 H01L21/66;G01B11/06 主分类号 H01L21/66
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