| 发明名称 |
HIGH PERFORMANCE CAPACITORS IN PLANAR BACK GATES CMOS |
| 摘要 |
A method of manufacture and device for a dual-gate CMOS structure. The structure includes a first plate (106a-d) in an insulating layer (100) and a second plate (110a-d) above the insulating layer electrically corresponding to the first plate. An isolation structure (108a-d) is between the first plate and the second plate. ® KIPO & WIPO 2008 |
| 申请公布号 |
KR20080026182(A) |
申请公布日期 |
2008.03.24 |
| 申请号 |
KR20087001233 |
申请日期 |
2006.06.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;NOWAK EDWARD J.;WILLIAMS RICHARD Q. |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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