| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device as an InGaN-based laser diode having a high In composition which has high light emitting efficiency by reducing an influence of a piezo field, and a method of manufacturing the semiconductor light emitting device. SOLUTION: The semiconductor light emitting device has a ZnO single crystal substrate 12 having a crystal face of a face orientation hardly influenced by the piezo field as a substrate face; a buffer layer 13 formed on the substrate face of the ZnO single crystal substrate 12 and lattice-matched on the ZnO single crystal substrate; an active layer 15 formed of an indium gallium nitride [In<SB>x</SB>Ga<SB>1-x</SB>N(0<x<1)]; and two cladding layers 14, 16 lattice-matched on either of the active layer 15 and the buffer layer 13. COPYRIGHT: (C)2008,JPO&INPIT
|
