| 摘要 |
In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO<SUB>2</SUB>, HfO<SUB>2</SUB>, (Zr<SUB>x</SUB>, Hf<SUB>1-x</SUB>)O<SUB>2 </SUB>(0<X<1), (ZR<SUB>y</SUB>, Ti<SUB>1-y</SUB>)O<SUB>2 </SUB>(0<Y<1), (HF<SUB>z</SUB>, Ti<SUB>1-z</SUB>)O<SUB>2 </SUB>(0<Z<1), (ZR<SUB>k</SUB>, Ti<SUB>l</SUB>, Hf<SUB>m</SUB>)O<SUB>2 </SUB>(0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.
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