发明名称 |
Semiconductor light emitting device |
摘要 |
A semiconductor light emitting device includes a multi-layer stack of materials including a layer of p-doped material, a layer of n-doped material, and a light generating region therebetween; a first thermal conduction path between the light generating region and the exterior of the device; and a second thermal conduction path having a higher thermal conductivity than that of the first thermal conduction path. The second thermal conduction path is for providing enhanced thermal dissipation from the light generating region to the exterior.
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申请公布号 |
US2008061306(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20060518912 |
申请日期 |
2006.09.12 |
申请人 |
HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCHINSTITUTE COMPANY LIMITED |
发明人 |
CHIU KUO AN;HUANG YAN;CHU HUNG-SHEN |
分类号 |
H01L33/64 |
主分类号 |
H01L33/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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