| 摘要 |
PROBLEM TO BE SOLVED: To reduce insulation destruction of an IPD film and a gate insulating film of a dummy cell caused by write voltage stress. SOLUTION: A non-volatile semiconductor memory comprises a first region (memory cell array part) in which memory cell transistors MT1-MTn are formed including gate electrodes in a stacked structure and a second region (memory cell array adjacent region), adjacent to the first region, in which dummy cells DC1-DCn are formed including gate electrodes in the same structure as the gate electrodes of the memory cell transistors MT1-MTn. Each of the memory cell transistors MT1-MTn includes a diffusion layer 6 that becomes a source/drain region, and each of the dummy cells DC1-DCn does not include a diffusion layer that becomes a source/drain region. COPYRIGHT: (C)2008,JPO&INPIT
|
